Electroless deposition of Co-based barriers: selectivity, corrosion and growth properties
| العنوان: | Electroless deposition of Co-based barriers: selectivity, corrosion and growth properties |
|---|---|
| المؤلفون: | Decorps, T., Haumesser, P. -H, Segolene OLIVIER, Roule, A., Avale, X., Joulaud, M., Pollet, O., Chainet, E., Passemard, G. |
| المساهمون: | STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Semitool, Inc., Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | Advanced Metallization Conference 2006 Advanced Metallization Conference 2006, Oct 2006, San Diego, United States. MRS Conference Proceedings, XXII, pp.221-225, 2007, Advanced Metallization Conference 2006 Scopus-Elsevier |
| بيانات النشر: | HAL CCSD, 2006. |
| سنة النشر: | 2006 |
| مصطلحات موضوعية: | [CHIM.ANAL]Chemical Sciences/Analytical chemistry, [CHIM]Chemical Sciences, [CHIM.MATE]Chemical Sciences/Material chemistry |
| الوصف: | International audience; Elcctroless metallic caps are convincing alternatives to standard SiC(N) barriers for the 45 nm technology node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, particular emphasis is put on possible selectivity issues, corrosion of the copper lines and nucleation/growth properties for two processes (Pd-activated Co\VP and Pd-free CoWB) deprniited in an industrial 300 mm equipment Co\VP process exhibits promising results for 12 nm nominal thickness. For both processes, the control of the preclean step seems to be fundamental to limit copper corrosion. Under optimal conditions, line resistance increase is limited to less than 3 %. |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bf3a124a1c541a541cd547532b281147 https://hal.archives-ouvertes.fr/hal-02384309 |
| رقم الأكسشن: | edsair.dedup.wf.001..bf3a124a1c541a541cd547532b281147 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |