A novel thin-film transistor with self-aligned field induced drain
| العنوان: | A novel thin-film transistor with self-aligned field induced drain |
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| المؤلفون: | Tiao-Yuan Huang, Chuan-Ding Lin, Tan Fu Lei, Horng-Chih Lin, Cheng-Yu Yu, Kuan-Lin Yeh |
| المصدر: | IEEE Electron Device Letters. 22:26-28 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2001. |
| سنة النشر: | 2001 |
| مصطلحات موضوعية: | Offset (computer science), Materials science, business.industry, Transistor, Electrical engineering, engineering.material, Effective length, Electronic, Optical and Magnetic Materials, law.invention, Polycrystalline silicon, Bottom gate, law, Thin-film transistor, engineering, Optoelectronics, Electrical and Electronic Engineering, business, Leakage (electronics) |
| الوصف: | In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with their effective FID length set by two separate photolithographic masking layers, the new SAFID is totally immune to photomasking misalignment errors, while enjoying the low off-state leakage as well as high turn-on characteristics inherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::02942610e9f801446ea5f3000cf37aec https://doi.org/10.1109/55.892433 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........02942610e9f801446ea5f3000cf37aec |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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