Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer
| العنوان: | Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer |
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| المؤلفون: | Gen Yue, Yang Jiang, Bin Zhao, H. S. Chen, Haiqiang Jia, Shen Yan, Yangfeng Li, Junming Zhou, Haojun Yang, Peng Zuo, Haiyan Wu |
| المصدر: | Optical and Quantum Electronics. 48 |
| بيانات النشر: | Springer Science and Business Media LLC, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Passivation, Light extraction in LEDs, business.industry, 02 engineering and technology, Electroluminescence, 021001 nanoscience & nanotechnology, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Reverse leakage current, Optics, Etching (microfabrication), law, 0103 physical sciences, Nano, Optoelectronics, Dry etching, Electrical and Electronic Engineering, 0210 nano-technology, business, Light-emitting diode |
| الوصف: | GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. |
| تدمد: | 1572-817X 0306-8919 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::07dc49479f611b84f11d24f7943a67f3 https://doi.org/10.1007/s11082-016-0551-9 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........07dc49479f611b84f11d24f7943a67f3 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1572817X 03068919 |
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