Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La2O3 Gate Dielectric
| العنوان: | Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La2O3 Gate Dielectric |
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| المؤلفون: | J. Q. Song, L. X. Qian, P.T. Lai |
| المصدر: | IEEE Transactions on Device and Materials Reliability. 18:333-336 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Gate dielectric, Transistor, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, 01 natural sciences, Subthreshold slope, Electronic, Optical and Magnetic Materials, law.invention, Amorphous solid, X-ray photoelectron spectroscopy, Thin-film transistor, law, Transmission electron microscopy, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Safety, Risk, Reliability and Quality, business |
| الوصف: | The effects of Hf incorporation in La2O3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. With an appropriate dose of Hf, the device performance can be significantly improved, resulting in high saturation mobility of 30.5 cm2V−1s−1, small subthreshold slope of 0.15 V/dec, and negligible hysteresis (0.05 V). These improvements are attributed to suppressed crystallization and enhanced moisture resistance of the gate dielectric (supported by transmission electron microscopy and atomic force microscopy respectively), both induced by the Hf incorporation. However, excessive Hf incorporation leads to device degradation, likely due to more oxygen vacancies generated in the gate dielectric as shown by X-ray photoelectron spectroscopy. |
| تدمد: | 1558-2574 1530-4388 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::07f9aaac9ec5f750cf54e8012d32e81c https://doi.org/10.1109/tdmr.2018.2840881 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........07f9aaac9ec5f750cf54e8012d32e81c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15582574 15304388 |
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