Mask undercut in deep silicon etch
| العنوان: | Mask undercut in deep silicon etch |
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| المؤلفون: | Iqbal Saraf, Brian E. Goodlin, Karen H. R. Kirmse, Lawrence J. Overzet, Matthew Goeckner |
| المصدر: | Applied Physics Letters. 98:161502 |
| بيانات النشر: | AIP Publishing, 2011. |
| سنة النشر: | 2011 |
| مصطلحات موضوعية: | Semiconductor thin films, Materials science, Physics and Astronomy (miscellaneous), Silicon, chemistry, Deposition (phase transition), chemistry.chemical_element, Nanotechnology, Undercut, Critical dimension, Engineering physics |
| الوصف: | Mask undercut in the time-multiplexed deep silicon etch process is becoming an increasingly significant issue as it is used to produce smaller critical dimension features. Models of the process must contain the necessary physics to reproduce the dependencies of mask undercut. We argue that the reason undercut develops is the dependence of the deposition step on ion flux. Our experiments of C4F8 (and CHF3 not shown) plasmas show that the film growth is dominantly ion-enhanced. This leads naturally to a mask undercut that increases in time. A more neutral flux dominant deposition step would result in reduced mask undercut. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::09b98ca85fc4ea4f54893178fc3a1817 https://doi.org/10.1063/1.3579542 |
| رقم الأكسشن: | edsair.doi...........09b98ca85fc4ea4f54893178fc3a1817 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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