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Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs

التفاصيل البيبلوغرافية
العنوان:	Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
المؤلفون:	In-Shik Han, Won-Ho Choi, Dae M. Kim, Hee-Hwan Ji, Hi-Deok Lee, Bomsoo Kim, Tae-Gyu Goo, Ook-Sang You, Chang-Ki Baek, Younghwan Son
المصدر:	2006 IEEE Nanotechnology Materials and Devices Conference.
بيانات النشر:	IEEE, 2006.
سنة النشر:	2006
مصطلحات موضوعية:	chemistry.chemical_compound, Materials science, chemistry, Nanoelectronics, Gate oxide, MOSFET, Analytical chemistry, Oxide, Remote plasma, chemistry.chemical_element, Nanoscopic scale, Nitrogen, Nitriding
الوصف:	Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nano-scale CMOSFET.
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d7573dd2b9a3026aad1f8dbb91d6517 https://doi.org/10.1109/nmdc.2006.4388878
رقم الأكسشن:	edsair.doi...........0d7573dd2b9a3026aad1f8dbb91d6517
قاعدة البيانات:	OpenAIRE

الوصف
الوصف غير متاح.