أعرض في EDS

Microstructure and conductivity of hot-pressed Si3N4–TiO2 (TiH2) composites cooled at different rates

التفاصيل البيبلوغرافية
العنوان: Microstructure and conductivity of hot-pressed Si3N4–TiO2 (TiH2) composites cooled at different rates
المؤلفون: S. N. Zdolnik, V. Ya. Petrovskii, I. V. Chernyakova
المصدر: Powder Metallurgy and Metal Ceramics. 49:99-109
بيانات النشر: Springer Science and Business Media LLC, 2010.
سنة النشر: 2010
مصطلحات موضوعية: Amorphous silicon, Materials science, Metals and Alloys, Activation energy, Conductivity, Condensed Matter Physics, Hot pressing, Microstructure, Crystallographic defect, law.invention, chemistry.chemical_compound, Silicon nitride, chemistry, Mechanics of Materials, law, Materials Chemistry, Ceramics and Composites, Crystallization, Composite material
الوصف: It is established that the cooling rate after hot pressing controls the crystallization and decrystallization in Si3N4–TiO2 (TiH2) composites. The critical cooling rate is 30 deg/min for Si3N4–TiO2 composites and 50 deg/min for Si3N4–TiH2 composites. It is shown that conductivity responds to the microstructural evolution of the composites as defect centers appear. The defects are located at trapping levels of (0.4 ± 0.05)–(1.3 ± 0.05) eV and differ in mutually perpendicular directions. The best combination of properties is shown by the composites with a monotrapping level with an activation energy of 0.8 ± 0.05 eV. These energy levels supposedly belong to the thin layer of amorphous silicon. The nascent defects are probably point defects or an association of point defects because of the low sensitivity of mechanical properties and strong response of conductivity to the cooling rate.
تدمد: 1573-9066
1068-1302
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0e418a8e0cef1e9c24f492b957432a64
https://doi.org/10.1007/s11106-010-9208-6
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........0e418a8e0cef1e9c24f492b957432a64
قاعدة البيانات: OpenAIRE
الوصف
تدمد:15739066
10681302