InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window
| العنوان: | InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window |
|---|---|
| المؤلفون: | Min-Lu Kao, Yan-Kui Liang, Yuan Lin, You-Chen Weng, Chang-Fu Dee, Po-Tsun Liu, Ching-Ting Lee, Edward Yi Chang |
| المصدر: | IEEE Electron Device Letters. 43:2105-2108 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::1025c069493b75abac9c7905ee2af4ff https://doi.org/10.1109/led.2022.3216620 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........1025c069493b75abac9c7905ee2af4ff |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
|---|