Highly reliable high-temperature superplastic Al-Zn eutectoid solder joining with stress relaxation characteristics for next generation SiC power semiconductor devices

التفاصيل البيبلوغرافية
العنوان: Highly reliable high-temperature superplastic Al-Zn eutectoid solder joining with stress relaxation characteristics for next generation SiC power semiconductor devices
المؤلفون: Kunihiro Tamahashi, Yoshinobu Motohashi, Mitsuo Kawakami, Mamoru Kobiyama, Yuji Kawamata, Takashi Inami, Akio Chiba, Yoshitaka Sugawara, Jin Onuki
المصدر: 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
بيانات النشر: IEEE, 2017.
سنة النشر: 2017
مصطلحات موضوعية: 010302 applied physics, Materials science, Alloy, Metallurgy, Superplasticity, 02 engineering and technology, Semiconductor device, Substrate (electronics), engineering.material, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Soldering, 0103 physical sciences, engineering, Stress relaxation, 0210 nano-technology, Eutectic system
الوصف: A new high-temperature lead-free solder joint which withstands temperatures up to 300°C and utilizes superplasticity in an Al-Zn eutectoid alloy has been developed to realize SiC power semiconductor devices. The joining process consists of interfacial cleaning of the joint formed utilizing superplasticity of the Al-Zn-eutectoid alloy at 250°C followed by bonding in the solid-liquid coexisting temperature range in order to control microstructures and to reduce occurrence of voids. The developed SiC/SiN substrate joints with void-free and stress relaxation effects show outstanding reliability in temperature cycle tests from −40°C to 300°C for 5000 cycles.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::123898e8a903cbc4dc0dab0a0b35cf4c
https://doi.org/10.23919/ispsd.2017.7988887
رقم الأكسشن: edsair.doi...........123898e8a903cbc4dc0dab0a0b35cf4c
قاعدة البيانات: OpenAIRE