Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

التفاصيل البيبلوغرافية
العنوان: Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness
المؤلفون: Yuto Ando, Frank Mehnke, Henri Bouchard, Zhiyu Xu, Alec M. Fischer, Shyh-Chiang Shen, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis
المصدر: Journal of Crystal Growth. 607:127100
بيانات النشر: Elsevier BV, 2023.
سنة النشر: 2023
مصطلحات موضوعية: Inorganic Chemistry, Materials Chemistry, Condensed Matter Physics
تدمد: 0022-0248
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::124a43b9fad31f194661ad5cc68e9481
https://doi.org/10.1016/j.jcrysgro.2023.127100
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........124a43b9fad31f194661ad5cc68e9481
قاعدة البيانات: OpenAIRE