A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the function of threshold voltage modulation is investigated.
