Charge-density-wave structure inNbSe3determined by scanning tunneling microscopy

التفاصيل البيبلوغرافية
العنوان: Charge-density-wave structure inNbSe3determined by scanning tunneling microscopy
المؤلفون: Zhenxi Dai, R. V. Coleman, C. G. Slough
المصدر: Physical Review Letters. 66:1318-1321
بيانات النشر: American Physical Society (APS), 1991.
سنة النشر: 1991
مصطلحات موضوعية: Tunnel effect, Materials science, Condensed matter physics, law, Resolution (electron density), Density of states, General Physics and Astronomy, Fermi surface, Electronic structure, Scanning tunneling microscope, Charge density wave, Quantum tunnelling, law.invention
الوصف: Scanning-tunneling-microscope images of NbSe{sub 3} at 4.2 K show that all three pairs of chains in the unit cell carry a strong charge-density-wave (CDW) modulation. The high-temperature CDW is strongly localized on one pair of chains, consistent with previous conclusions. The low-temperature CDW forms on the remaining two pairs of chains in disagreement with previous results and analysis which concluded that only one pair of chains participated in the low-temperature CDW formation.
تدمد: 0031-9007
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::174c148fe5cada05ed25348df4025338
https://doi.org/10.1103/physrevlett.66.1318
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........174c148fe5cada05ed25348df4025338
قاعدة البيانات: OpenAIRE