Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
| العنوان: | Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys |
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| المؤلفون: | Isaac Bryan, Ramon Collazo, Shun Washiyama, Zlatko Sitar, Pramod Reddy, Douglas L. Irving, Seiji Mita, Ji Hyun Kim, Zachary Bryan, James Tweedie, Ronny Kirste |
| المصدر: | Applied Physics Letters. 116:032102 |
| بيانات النشر: | AIP Publishing, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Band gap, Fermi level, 02 engineering and technology, 021001 nanoscience & nanotechnology, Antibonding molecular orbital, 01 natural sciences, Condensed Matter::Materials Science, symbols.namesake, Impurity, 0103 physical sciences, symbols, Energy level, Vacuum level, 0210 nano-technology, Shallow donor, Surface states |
| الوصف: | In this work, we determine the dependence of the defect transition energies, electronic bands, and surface charge neutrality levels in AlGaN. With Vacuum level as reference, we show that energy transitions of localized defects and the surface Fermi level are independent of the alloy composition as electronic bands diverge with the increase in the bandgap as a function of alloy composition. The invariance of localized states on the alloy composition creates a convenient internal reference energy with respect to which other energy states may be measured. We demonstrate a higher generality to the universality rule with the independence of deep transition states of otherwise shallow donor type defects [(+1/+3) transition for VN] and defect complexes (CN+SiIII) in addition to the earlier predicted independent nature of mid-gap states when they are either the antibonding state between cationic impurities and host anion or acceptors at anion sites. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::18abe7b023a0a0caebd940efd3165999 https://doi.org/10.1063/1.5140995 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........18abe7b023a0a0caebd940efd3165999 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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