Performance Enhancement in Double-Gated Poly-Si Nanowire Transistors With Reduced Nanowire Channel Thickness
| العنوان: | Performance Enhancement in Double-Gated Poly-Si Nanowire Transistors With Reduced Nanowire Channel Thickness |
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| المؤلفون: | Chuan-Ding Lin, Wei-Chen Chen, Tiao-Yuan Huang, Horng-Chih Lin |
| المصدر: | IEEE Electron Device Letters. 30:644-646 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2009. |
| سنة النشر: | 2009 |
| مصطلحات موضوعية: | Fabrication, Materials science, Silicon, business.industry, Transistor, Nanowire, chemistry.chemical_element, Nanotechnology, engineering.material, Thermal conduction, Electronic, Optical and Magnetic Materials, law.invention, Polycrystalline silicon, chemistry, Etching (microfabrication), law, Hardware_INTEGRATEDCIRCUITS, engineering, Optoelectronics, Electrical and Electronic Engineering, business, Communication channel |
| الوصف: | A new method is proposed and successfully demonstrated for the fabrication of polycrystalline silicon (poly-Si) nanowire (NW) transistors with rectangular-shaped NW channels and two independent gates. The two independently controllable gates allow higher flexibility in device operation and provide a unique insight into the conduction mechanism of the NW device. Our results indicate that dramatic performance enhancement is feasible when the thickness of the NW channel is sufficiently thin, and the two conduction channels in the NW structure are operating simultaneously. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::18d159c91912dbd0db61a18b429d63f5 https://doi.org/10.1109/led.2009.2018493 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........18d159c91912dbd0db61a18b429d63f5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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