Performance Evaluation and Comparison of Monolithic and Mechanically Stacked Dual Tandem InGaP/GaAs Heterojunction on Ge Cell: A TCAD Study
| العنوان: | Performance Evaluation and Comparison of Monolithic and Mechanically Stacked Dual Tandem InGaP/GaAs Heterojunction on Ge Cell: A TCAD Study |
|---|---|
| المؤلفون: | O. Terghini, A. M. Mefteh, Lakhdar Dehimi, H. Bencherif |
| المصدر: | Transactions on Electrical and Electronic Materials. 21:384-393 |
| بيانات النشر: | Springer Science and Business Media LLC, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Tandem, business.industry, Energy conversion efficiency, chemistry.chemical_element, Heterojunction, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, 0103 physical sciences, Gallium phosphide, Optoelectronics, Wafer, Electrical and Electronic Engineering, 0210 nano-technology, business, Indium |
| الوصف: | The photovoltaic characteristics of a mechanically and monolithic stacked tandem solar cell of the heterojunction InGaP/GaAs and Ge sub cells, were numerically simulated under 1-sun air mass 1.5 global spectrum (AM1.5G) at ambient temperature (300 K) using the two-dimensional device simulator Silvaco–Atlas. Our tandem structure consists of a thin upper cell with heterojunction of indium and gallium phosphide on gallium arsenide (In0.49Ga0.51P/GaAs), on a relatively thick germanium (Ge) substrate which acts as a lower cell in order to obtain good performances of such a structure. We studied both cells, stacked mechanically (four terminal:4T) and monolithic (two terminal:2T) using Silvaco ATLAS Virtual Wafer FabricationTool. First, we have simulated the single InGaP/GaAs and Ge solar cells with fixed thicknesses at 1.4 µm and 210 µm respectively. They presented a conversion efficiencies (ƞ) of 30.32% and 10.96% respectively. The efficiency of mechanically stacked tandem solar is 30.96% and short current density of 26.16 mA/cm2 which is limited by the lower short current density of both sub-cells. Using the method of current matching, by varying the base thicknesses of the InGaP/GaAs top and Ge bottom sub-cells, the numerical simulation results presented a matched maximum current Jsc value of 29.12 mA/cm2 obtained at base thicknesses of 0.605 and 209.9 μm for the InGaP/GaAs top and Ge bottom sub-cells respectively, leading to a high power conversion efficiency (ƞ) of the mechanically stacked sub cells of 34.77%, the open-circuit voltage and the fill factor are 1.329 V and 88.96%, respectively. Next, the sub-cells were interconnected with tunnel junctions (TJs), p-GaAs/n-GaAs to allow carrier transport, the results of the monolithic stacked sub-cells are converged with results of the mechanically stacked sub-cells, and are represented in the following results of the tandem cell: power conversion efficiency (ƞ) of 32.96%, the open-circuit voltage of 1.343 V, the short current of 29.19 mA/cm2 and the fill factor of 84.05%. |
| تدمد: | 2092-7592 1229-7607 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::1991725eeaf2b364d6dca58f6470e791 https://doi.org/10.1007/s42341-020-00191-2 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........1991725eeaf2b364d6dca58f6470e791 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 20927592 12297607 |
|---|