Capacitance Analysis of Highly Leaky $\hbox{Al}_{2} \hbox{O}_{3}$ MIM Capacitors Using Time Domain Reflectometry

التفاصيل البيبلوغرافية
العنوان: Capacitance Analysis of Highly Leaky $\hbox{Al}_{2} \hbox{O}_{3}$ MIM Capacitors Using Time Domain Reflectometry
المؤلفون: Byoung Hun Lee, Hiroaki Niimi, Brian K. Kirkpatrick, Kwan-Yong Lim, Chang Goo Kang, Yonghun Kim, James Walter Blatchford, Young Gon Lee, Jin Ju Kim, Ukjin Jung, Seung Chul Song, Minwoo Kim
المصدر: IEEE Electron Device Letters. 33:1303-1305
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2012.
سنة النشر: 2012
مصطلحات موضوعية: Materials science, business.industry, Voltage coefficient, Analytical chemistry, Dielectric, Capacitance, Electronic, Optical and Magnetic Materials, law.invention, Impedance analyzer, Capacitor, law, Optoelectronics, Time domain, Electrical and Electronic Engineering, business, Reflectometry, Electrical impedance
الوصف: Characterization of metal-insulator-metal (MIM) capacitors with a scaled dielectric is a challenge using conventional capacitance-voltage (C-V) measurements due to a high leakage current. In this letter, a method to analyze MIM capacitance that is more immune to the leakage current problem has been successfully demonstrated using time domain reflectometry (TDR). The TDR method can be applied to Al2O3 MIM capacitors with a capacitance density up to ~ 11.1 fF/μm2, for which an impedance analyzer has failed to measure capacitance at 1 MHz. Differences in the voltage coefficient of capacitance and dielectric constant (k) were also investigated.
تدمد: 1558-0563
0741-3106
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1cf2afbbfa59e363b915c7b4972b678f
https://doi.org/10.1109/led.2012.2205213
رقم الأكسشن: edsair.doi...........1cf2afbbfa59e363b915c7b4972b678f
قاعدة البيانات: OpenAIRE