300 mm diameter thinned-down wafers are manufactured using temporary adhesive bonding. A thermoplastic adhesive and a silicon carrier are used to fabricate 100 μm thick silicon wafers. The impact of temperature on the thickness homogeneity of temporary bonded stacks is studied. From 150 °C up to 300 °C, the total thickness of the structure increases with the temperature. Moreover, its amplitude strongly increases with the thinned wafer stress and the adhesive thickness. On the contrary, it does not depend on the different interface adherence. The thinned wafer stress results in a significant peeling force which drives the deformation of the structure. This deformation is possible because of the high elasticity of the polymer at high temperature. To reduce this deformation, an alternative carrier is proposed yielding reduction of the adhesive thickness at the bonded edge only.
