The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined elements show ft/fmax improvement up to about 1.13/1.1x (NFET) and about 1.32/1.24x (PFET) over standard devices mainly driven by mechanical stress and parasitic R/C elements.
