Thermoelectric Properties of Silicon Carbide Sintered with Addition of Boron Carbide, Carbon, and Alumina
العنوان: | Thermoelectric Properties of Silicon Carbide Sintered with Addition of Boron Carbide, Carbon, and Alumina |
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المؤلفون: | Hidenori Era, Yasuhiro Ohba, Toshitada Shimozaki |
المصدر: | MATERIALS TRANSACTIONS. 49:1235-1241 |
بيانات النشر: | Japan Institute of Metals, 2008. |
سنة النشر: | 2008 |
مصطلحات موضوعية: | Materials science, Mechanical Engineering, Metallurgy, Analytical chemistry, Sintering, chemistry.chemical_element, Boron carbide, Condensed Matter Physics, chemistry.chemical_compound, chemistry, Mechanics of Materials, visual_art, Thermoelectric effect, Silicon carbide, visual_art.visual_art_medium, General Materials Science, Ceramic, Carbon, Aluminum oxide |
الوصف: | The thermoelectric properties were examined of SiC specimens prepared by mixing � -SiC powder with B4C, C, and Al2O3 and then sintering at 2100 � C. Sintered specimens containing Al2O3 up to 3% with 0.5% B4C and 2.5% C exhibited the highest densities. The electrical conductivities of these specimens increased with the Al2O3 content up to 3%. In contrast, the Seebeck coefficients of these specimens decreased with the addition of 1% Al2O3, but then barely decreased with the further addition of Al2O3. The maximum value of the power factor, 9:43 � 10 � 4 W/mK 2 at 800 � C, was obtained with specimens sintered with 3% Al2O3 as well as B4C and C. These results showed that the power factor of SiC ceramics could be enhanced by adding proper amounts of B4C, C, and Al2O3 into them. [doi:10.2320/matertrans.MRA2007232] |
تدمد: | 1347-5320 1345-9678 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::24b136df573159865f6bbab91122a23e https://doi.org/10.2320/matertrans.mra2007232 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi...........24b136df573159865f6bbab91122a23e |
قاعدة البيانات: | OpenAIRE |
تدمد: | 13475320 13459678 |
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