Passive-Oxidation Kinetics of High-Purity Silicon Carbide from 800o to 1100oC
العنوان: | Passive-Oxidation Kinetics of High-Purity Silicon Carbide from 800o to 1100oC |
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المؤلفون: | C. F. Ramberg, C. Eric Ramberg, Karl E. Spear, Gary Cruciani, Richard E. Tressler |
المصدر: | Journal of the American Ceramic Society. 79:2897-2911 |
بيانات النشر: | Wiley, 1996. |
سنة النشر: | 1996 |
مصطلحات موضوعية: | Materials science, Silicon, Bar (music), Oxide, Analytical chemistry, chemistry.chemical_element, Mineralogy, Activation energy, Kinetic energy, chemistry.chemical_compound, chemistry, Ellipsometry, Materials Chemistry, Ceramics and Composites, Silicon carbide, Single crystal |
الوصف: | Highly textured chemically vapor-deposited silicon carbide (CVD-SiC) thick films were oxidized and compared to single-crystal SiC and single-crystal silicon. The oxidation rates of the (111) face of the cubic CVD-SiC were the same as those of the (0001) face of the single-crystal SiC. Similarly, the opposite faces of the two materials, ({bar 1}{bar 1}{bar 1}) and (000{bar 1}), also oxidized at nominally the same rates. The ({bar 1}{bar 1}{bar 1}) and (000{bar 1}) faces oxidized much faster than their opposite (111)/(0001) faces. Ellipsometry measurements and kinetic results implied that differences existed between the oxides that grew on the opposite faces. A regression method was developed to analyze the oxide thickness versus time versus temperature behavior of the specimens simultaneously. This technique was compared to typical methods for analyzing temperature-dependent processes and estimated temperature-dependent parameters (e.g., activation energy) and their errors more accurately. |
تدمد: | 1551-2916 0002-7820 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2506ab2e32c7970fd2ccfa6e1a484656 https://doi.org/10.1111/j.1151-2916.1996.tb08724.x |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi...........2506ab2e32c7970fd2ccfa6e1a484656 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 15512916 00027820 |
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