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Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

التفاصيل البيبلوغرافية
العنوان: Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys
المؤلفون: C. Ticoş, Rachel Goldman, E.-M. Pavelescu, Raluca Gavrila, Akihiro Wakahara, A. Matei, Keisuke Yamane, O. Ligor, J. Occena
المصدر: Applied Physics Letters. 117:142106
بيانات النشر: AIP Publishing, 2020.
سنة النشر: 2020
مصطلحات موضوعية: 010302 applied physics, Diffraction, Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), Annealing (metallurgy), Alloy, Analytical chemistry, 02 engineering and technology, engineering.material, 021001 nanoscience & nanotechnology, 01 natural sciences, Blueshift, 0103 physical sciences, engineering, Electron beam processing, Irradiation, 0210 nano-technology, Molecular beam epitaxy
الوصف: We have examined the influence of electron irradiation and rapid thermal annealing on photoluminescence emission from GaAsNBi alloys. Electron irradiation of a 1-eV compressively strained GaNAsBi-on-GaAs epilayer, grown by molecular beam epitaxy and subsequently rapidly thermally annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. At the same time, annealing of the irradiated sample caused a negligible spectral blueshift and reduced alloy potential energy fluctuations. These irradiation-related phenomena occurred without a change in the alloy macroscopic composition as revealed by x-ray diffraction and are mainly related to the nitrogen incorporated into non-substitutional sites in the quaternary alloy.
تدمد: 1077-3118
0003-6951
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::256594a9acba3f4c5a03e4c5a611ca2d
https://doi.org/10.1063/5.0027400
رقم الأكسشن: edsair.doi...........256594a9acba3f4c5a03e4c5a611ca2d
قاعدة البيانات: OpenAIRE
الوصف
تدمد:10773118
00036951