التفاصيل البيبلوغرافية
| العنوان: |
Selective Epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain and/or Buried SiGe Channels |
| المؤلفون: |
Roger Loo, Peter verheyen, Rita rooyackers, Christian Walczyk, Frederik Leys, Denis Shamiryan, Philip Absil, Tinne Delande, Alain Moussa, Hans Weijtmans, Rick Wise, Vladimir Machkaoutsan, Chantal Arena, John McCormack, Sophie Passefort, Haruyuki Sorada, Akira Inoue, Byeong Chan Lee, Sangjin Hyun, Stefan Jakschik, Matty R. Caymax |
| المصدر: |
ECS Meeting Abstracts. :1450-1450 |
| بيانات النشر: |
The Electrochemical Society, 2006. |
| سنة النشر: |
2006 |
| الوصف: |
not Available. |
| تدمد: |
2151-2043 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::26c7e6f9ae2a6b902e7df4505919648d
https://doi.org/10.1149/ma2006-02/31/1450 |
| حقوق: |
OPEN |
| رقم الأكسشن: |
edsair.doi...........26c7e6f9ae2a6b902e7df4505919648d |
| قاعدة البيانات: |
OpenAIRE |
