Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties
| العنوان: | Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties |
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| المؤلفون: | Shigekazu Okumura, Kazuki Fujisawa, Tamami Naruke, Kenichi Nishi, Yutaka Onishi, Keizo Takemasa, Mitsuru Sugawara, Masakazu Sugiyama |
| المصدر: | Japanese Journal of Applied Physics. 61:085503 |
| بيانات النشر: | IOP Publishing, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Physics and Astronomy (miscellaneous), General Engineering, General Physics and Astronomy |
| الوصف: | The effect of low-temperature InGaAs/GaAs cover layer growth of InAs quantum dots on their optical and structural properties was investigated. Photoluminescence intensity depended heavily on the growth temperature and thickness of the low-temperature cover layer and decreased as the number of dislocations formed directly above InAs quantum dots increased. These dislocations are formed at the initial stage of high-temperature GaAs growth, originating from pits that remain on the surface after the growth of the low-temperature cover layer and subsequent annealing. To ensure a high-quality InAs quantum dot structure free from dislocations, it is important to obtain a highly flat surface with suppressed pits after low-temperature cover layer growth and subsequent annealing. |
| تدمد: | 1347-4065 0021-4922 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::26ebceb18a37b367b49a779810ecad54 https://doi.org/10.35848/1347-4065/ac7caa |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........26ebceb18a37b367b49a779810ecad54 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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