التفاصيل البيبلوغرافية
| العنوان: |
Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells |
| المؤلفون: |
K. G. Zolin, A. E. Yunovich, F. I. Manyakhin, A.N. Kovalev, V. E. Kudryashov, A. N. Turkin |
| المصدر: |
Semiconductors. 31:1123 |
| بيانات النشر: |
Pleiades Publishing Ltd, 1997. |
| سنة النشر: |
1997 |
| مصطلحات موضوعية: |
Materials science, business.industry, Resonant-tunneling diode, Algan gan, Heterojunction, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, law, Optoelectronics, business, Quantum tunnelling, Quantum well, Light-emitting diode |
| تدمد: |
1063-7826 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4f3428acbbc8ab4cb38a7738f20c1c
https://doi.org/10.1134/1.1187278 |
| رقم الأكسشن: |
edsair.doi...........2a4f3428acbbc8ab4cb38a7738f20c1c |
| قاعدة البيانات: |
OpenAIRE |
Find this article in full text from Springer Verlag.