We have demonstrated Si and Be doped InAs1−xSbx-based heterostructures (0.3 ≤ x ≤ 0.9) for LWIR and VLWIR detection grown by molecular beam epitaxy on semi-insulating GaAs (0 0 1) substrates. Wet etching and electroplating were used to fabricate photoconductive and photovoltaic devices optimized for 50% cut-off wavelengths ranging from 8 to 16 µm at room temperature. Photoelectrical properties of the devices were studied. The devices based on minimum bandgap material were optimized for a high-frequency operation in a wide spectral range with response time down to 100 ps. Other devices doping level in the active layer was chosen to reach high room-temperature detectivity. Furthermore, the implementation of monolithic optical immersion has drastically improved the signal to noise ratio allowing uncooled or Peltier-cooled operation.
