Nitride-Based Light-Emitting Diodes with a Radiated-Cone-Shaped Structure at GaN/Sapphire Interface
| العنوان: | Nitride-Based Light-Emitting Diodes with a Radiated-Cone-Shaped Structure at GaN/Sapphire Interface |
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| المؤلفون: | Sih-Han Chen, Tzu-Yun Yu, Bing-Cheng Shieh, Chun-Min Lin, Kuei-Ting Chen, Jing-Jie Dai, Chia-Feng Lin |
| المصدر: | ECS Journal of Solid State Science and Technology. 1:R7-R10 |
| بيانات النشر: | The Electrochemical Society, 2012. |
| سنة النشر: | 2012 |
| مصطلحات موضوعية: | Materials science, Photoluminescence, business.industry, Nitride, Light scattering, Electronic, Optical and Magnetic Materials, Active layer, law.invention, Optics, law, Sapphire, Optoelectronics, Light emission, business, Diode, Light-emitting diode |
| الوصف: | InGaN-based light-emitting diode (LED) with a radiated-cone-shaped structure at GaN/sapphire interface was fabricated through a laser drilling process and a photoelectrochemical (PEC) wet etching process. The inverted cone-shaped GaN structure was formed around the laser-drilled hole as a light scattering structure to enhance the light extraction efficiency at central mesa region. The light output power of the PEC-treated LED structure had an approximate 19% enhancement when compared to a conventional LED at 20 mA. The photoluminescence peak wavelength of the InGaN active layer was slightly blueshifted from 458.4 nm for the conventional LED to 449.9 nm for the treated-LED that could be caused by partially reducing the compressive strain induced piezoelectric field by forming the radiated-cone-shaped structure at GaN/sapphire interface. High light emission intensity for the treated LED structure was observed around the laser-drilled hole pattern as a result of a higher light-scattering process occurring at the radiated-cone-shaped structure for the InGaN-based LED applications. |
| تدمد: | 2162-8777 2162-8769 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2da43c0f32d08714a875bb8a620ad735 https://doi.org/10.1149/2.004201jss |
| رقم الأكسشن: | edsair.doi...........2da43c0f32d08714a875bb8a620ad735 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21628777 21628769 |
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