Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect
| العنوان: | Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect |
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| المؤلفون: | Tomomasa Ueda, Tsutomu Tezuka, Nobuyoshi Saito, Keiji Ikeda, Junji Kataoka, Tomoaki Sawabe |
| المصدر: | Japanese Journal of Applied Physics. 58:SBBJ03 |
| بيانات النشر: | IOP Publishing, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), business.industry, Contact resistance, General Engineering, General Physics and Astronomy, chemistry.chemical_element, Tungsten, chemistry, Thin-film transistor, Electrode, Optoelectronics, Channel (broadcasting), business |
| تدمد: | 1347-4065 0021-4922 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2e7e06a874792545dfa82155035ae3b0 https://doi.org/10.7567/1347-4065/aafd97 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........2e7e06a874792545dfa82155035ae3b0 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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