A copper‐related acceptor complex in vacuum grown germanium crystals
| العنوان: | A copper‐related acceptor complex in vacuum grown germanium crystals |
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| المؤلفون: | C. S. Olsen, William L. Hansen, G. Sirmain, Oscar D. Dubon, E. E. Haller |
| المصدر: | Journal of Applied Physics. 79:209-213 |
| بيانات النشر: | AIP Publishing, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), Doping, Binding energy, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Germanium, Acceptor, Copper, Condensed Matter::Materials Science, Crystallography, chemistry, Ground state, Spectroscopy |
| الوصف: | A copper‐related shallow acceptor complex has been discovered in germanium single crystals grown in vacuum and doped with arsenic and copper. Photothermal ionization spectroscopy of samples quenched from 673 K reveals two sets of hydrogenic lines with ground state binding energies of 9.15 and 10.05 meV. The line intensity ratios between corresponding transitions (1s‐np) of the two hydrogenic series follow a Boltzmann dependence. This shows that the two series belong to the same impurity complex with a split ground state. Taking into account the crystal growth conditions together with the changes in the donor concentration deduced from variable temperature Hall effect measurements, we conclude that arsenic and substitutional copper form the new acceptor complex A(Cus,As) since copper is the only fast‐diffusing species at this low annealing temperature. This complex is expected to have C3v symmetry in agreement with preliminary piezospectroscopy measurements. |
| تدمد: | 1089-7550 0021-8979 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2e94d1a22aa6b87e9407ad4fb2742dd8 https://doi.org/10.1063/1.360933 |
| رقم الأكسشن: | edsair.doi...........2e94d1a22aa6b87e9407ad4fb2742dd8 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10897550 00218979 |
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