Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps)
| العنوان: | Investigation of capacitance characteristics in metal/high-k semiconductor devices at different parameters and with and without interface state density (traps) |
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| المؤلفون: | Neila Hizem, Slah Hlali, Adel Kalboussi |
| المصدر: | Bulletin of Materials Science. 40:1035-1041 |
| بيانات النشر: | Springer Science and Business Media LLC, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Doping, Analytical chemistry, Oxide, 02 engineering and technology, Substrate (electronics), Semiconductor device, 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, MIS capacitor, law.invention, chemistry.chemical_compound, Capacitor, chemistry, Mechanics of Materials, law, 0103 physical sciences, General Materials Science, 0210 nano-technology, High-κ dielectric |
| الوصف: | Capacitance vs. voltage ( $$C{-}V$$ ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitor are investigated in this paper. Bi-dimensional simulations with Silvaco TCAD were carried out to study the effect of oxide thickness, the surface of the structure, frequency, temperature and fixed charge in the oxide on the $$C{-}V$$ curves. We evaluate also the analysis of MIS capacitor structures by different substrate doping concentrations with and without interface state density at different temperatures (100, 300 and 600 K). These studies indicate that the doping substrate concentration and the traps enormously affect the high-frequency $$C{-}V$$ curve behaviour. We also demonstrate that for low and high temperatures, the high-frequency $$C{-}V$$ curves behaviour changes, indicating that the capacitance due to the substrate is significantly influenced in these conditions (bias and substrate doping concentration). |
| تدمد: | 0973-7669 0250-4707 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::2f486a64b5f98a2e8241b0054db17138 https://doi.org/10.1007/s12034-017-1443-8 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........2f486a64b5f98a2e8241b0054db17138 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 09737669 02504707 |
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