Bond-strength inversion in (In,Ga)As semiconductor alloys
| العنوان: | Bond-strength inversion in (In,Ga)As semiconductor alloys |
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| المؤلفون: | Erich Eckner, Konrad Ritter, Claudia Schnohr, Jura Rensberg, Erik Haubold, Robert Röder, Mark C Ridgway, Stefanie Eckner, Philipp Schöppe |
| المصدر: | Physical Review B. 97 |
| بيانات النشر: | American Physical Society (APS), 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Quantitative Biology::Biomolecules, Materials science, Bond strength, Alloy, Thermodynamics, 02 engineering and technology, Bending, engineering.material, 021001 nanoscience & nanotechnology, 01 natural sciences, Inversion (discrete mathematics), Bond length, Condensed Matter::Materials Science, Matrix (mathematics), 0103 physical sciences, engineering, 010306 general physics, 0210 nano-technology, Absorption (electromagnetic radiation), Spectroscopy |
| الوصف: | The atomic-scale structure and vibrational properties of semiconductor alloys are determined by the energy required for stretching and bending the individual bonds. Using temperature-dependent extended x-ray absorption fine-structure spectroscopy, we have determined the element-specific In-As and Ga-As effective bond-stretching force constants in (In,Ga)As as a function of the alloy composition. The results reveal a striking inversion of the bond strength where the originally stiffer bond in the parent materials becomes the softer bond in the alloy and vice versa. Our findings clearly demonstrate that changes of both the individual bond length and the surrounding matrix affect the bond-stretching force constants. We thus show that the previously used common assumptions about the element-specific force constants in semiconductor alloys do not reproduce the composition dependence determined experimentally for (In,Ga)As. |
| تدمد: | 2469-9969 2469-9950 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::300850296aef58274e4a62d63876306b https://doi.org/10.1103/physrevb.97.195202 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........300850296aef58274e4a62d63876306b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 24699969 24699950 |
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