A model has been developed for calculating the dynamic oxygen concentration change in silicon bulk melts during Czochralski crystal growth via consideration of the balance among competing oxygen fluxes in this system. Here, a single oxygen species in the melt is assumed. In this model, the important parameters are found to be (1) the equilibrium oxygen concentration at the crucible wall, (2) the surface area ratio between the free melt surface and the crucible-melt contacting surface, (3) the SiO partial pressure in the main gas stream, and (4) a lumped melt convection parameter, Q . The effect of these parameters on the oxygen content in silicon melts is examined and the possible use of this model for online control of oxygen content in silicon crystals is discussed.
