Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition
| العنوان: | Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition |
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| المؤلفون: | Xiaoxiao Chen, Xu Su'e, Wang Wenzhao, Yang Zeng, Xiangbin Zeng, Wu Shaoxiong, Hongxing Cui, Zhou Guangtong, Hu Yishuo |
| المصدر: | Journal of Electronic Materials. 47:5509-5517 |
| بيانات النشر: | Springer Science and Business Media LLC, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 010402 general chemistry, 01 natural sciences, symbols.namesake, chemistry.chemical_compound, X-ray photoelectron spectroscopy, Monolayer, Materials Chemistry, Electrical and Electronic Engineering, Molybdenum disulfide, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, symbols, Optoelectronics, 0210 nano-technology, Raman spectroscopy, business, Single crystal |
| الوصف: | Recently, great efforts have been devoted to study of molybdenum disulfide (MoS2), particularly monolayer MoS2 semiconductor thin films, due to its excellent electrical and optical properties. Direct growth of continuous monolayer MoS2 films by ambient-pressure chemical vapor deposition is reported herein. Optical microscopy, Raman spectroscopy, photoluminescence spectra (PL), atomic force microscopy, x-ray photoelectron spectroscopy (XPS), and high-resolution transmission electronic microscopy were used to characterize the electronic and structural properties of the films, demonstrating that the MoS2 films grown on silicon dioxide/silicon (SiO2/Si) substrate with spatial size on micron scale were high quality, single crystal, continuous, and monolayer. Raman and PL mapping were performed to confirm the uniformity of the monolayer MoS2 films. The morphological variation of the MoS2 films after different reaction times was observed by optical microscopy and scanning electron microscopy, revealing the growth process and thus helping to understand that the growth mechanism during synthesis of continuous large-area films depends on the distribution of the reactive intermediate molybdenum oxide (MoO3−x) due to its lower saturation vapor density. Back-gated transistors based on MoS2 films were fabricated, exhibiting current on/off ratio of ∼ 104 and subthreshold swing (SS) of 0.44 V dec−1. This work contributes to synthesis of large-area continuous films, thus paving the way for future scaled-up fabrication of MoS2 electronic devices. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::3323317c25abb4efb4aceb6404c3096a https://doi.org/10.1007/s11664-018-6443-y |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........3323317c25abb4efb4aceb6404c3096a |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
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