A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology

التفاصيل البيبلوغرافية
العنوان: A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology
المؤلفون: Eiichi Makino, Rieko Tanaka, Masaaki Higashitani, Hiromitsu Komai, Dai Nakamura, Kiyomi Naruke, Brian Murphy, Yoshikazu Hosomura, T. Ogawa, Junji Musha, Mai Muramoto, Ayako Yuminaka, G. Hemink, Yoshihiko Shindo, Yasuhiko Matsunaga, Yosuke Kato, Toshiaki Edahiro, Kiyofumi Sakurai, Naoaki Kanagawa, M. Watanabe, Hitoshi Shiga, Bo Lei, Koichi Fukuda, Naoya Tokiwa, Toru Miwa, Koichi Kawakami, Go Shikata, Takatoshi Minamoto, Junpei Sato, Hong Ding, Makoto Iwai, Alex Mak, Manabu Sakai, Teruo Takagiwa, Osamu Nagao, Takahiko Hara, Masaru Nakamichi, Dana Lee, Yuya Suzuki, Yuka Furuta, Kosuke Yanagidaira, Yoshihisa Watanabe
المصدر: ISSCC
بيانات النشر: IEEE, 2011.
سنة النشر: 2011
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Computer science, Nand flash memory, business.industry, NAND gate, USB, Flash memory, law.invention, Flash (photography), CMOS, law, Server, Embedded system, business, Computer hardware, Computer memory, Flash file system
الوصف: NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so on. This is because higher storage capacity and lower cost are realized through means of technology scaling every year. Emerging markets, such as solid-state drives (SSDs) and data-storage servers, require lower bit cost, higher program and read throughputs, and lower power consumption
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::362aa4eac762a5471fbc0119e0f572b9
https://doi.org/10.1109/isscc.2011.5746280
رقم الأكسشن: edsair.doi...........362aa4eac762a5471fbc0119e0f572b9
قاعدة البيانات: OpenAIRE