Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film
| العنوان: | Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film |
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| المؤلفون: | Tie Lin, J. H. Chu, W. Z. Zhou, Shouren Guo, Guangyou Yu, Jiyang Sun, L. Y. Shang, X. J. Meng |
| المصدر: | Applied Physics A. 106:703-707 |
| بيانات النشر: | Springer Science and Business Media LLC, 2011. |
| سنة النشر: | 2011 |
| مصطلحات موضوعية: | Surface (mathematics), Condensed matter physics, Chemistry, Oxide, General Chemistry, Electron, Surface concentration, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Thermal conduction, chemistry.chemical_compound, Hall effect, General Materials Science, Thin film |
| الوصف: | The surface transport properties of naturally oxidized p-type Hg0.776Cd0.224Te thin film were investigated in the magnetic-field region 0–14 T and in the temperature region 8–300 K. The Hall electron concentration increases with temperature, while the surface concentration of the two-dimensional electrons in the naturally oxidized surface, calculated by Shubnikov–de Haas oscillations, decreases as temperature increases at temperatures below 20 K. The contradiction and the extraordinary quantum Hall filling factors are accounted for by assuming extra bulk-like electrons in the surface region, which dominate the surface transport properties at temperatures over 8 K. |
| تدمد: | 1432-0630 0947-8396 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::367c72979144551a600d166e4eb175cc https://doi.org/10.1007/s00339-011-6672-x |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........367c72979144551a600d166e4eb175cc |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 14320630 09478396 |
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