Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory
| العنوان: | Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory |
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| المؤلفون: | Kasidit Toprasertpong, Kento Tahara, Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito, Mitsuru Takenaka, Shinichi Takagi |
| المصدر: | ACS Applied Materials & Interfaces. 14:51137-51148 |
| بيانات النشر: | American Chemical Society (ACS), 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | General Materials Science |
| تدمد: | 1944-8252 1944-8244 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::3862ebb088e71371a4a118a4a0cba2e6 https://doi.org/10.1021/acsami.2c15369 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........3862ebb088e71371a4a118a4a0cba2e6 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 19448252 19448244 |
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