Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3CSiC
| العنوان: | Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3CSiC |
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| المؤلفون: | David J. Larkin, H. S. Kong, John A. Edmond, Robert P. Devaty, J. A. Powell, Wolfgang J. Choyke, M. Yoganathan, L. L. Clemen, Mike F. MacMillan |
| المصدر: | Applied Physics Letters. 62:2953-2955 |
| بيانات النشر: | AIP Publishing, 1993. |
| سنة النشر: | 1993 |
| مصطلحات موضوعية: | Materials science, Photoluminescence, Physics and Astronomy (miscellaneous), Silicon, Condensed matter physics, business.industry, Exciton, Doping, chemistry.chemical_element, Cathodoluminescence, Molecular physics, Acceptor, Semiconductor, chemistry, Multiplicity (chemistry), business |
| الوصف: | Evidence is presented for a four particle acceptor complex in 3C, 6H, and 4H SiC, obtained in low-temperature photoluminescence and cathodoluminescence experiments. The new lines were observed in p-type films lightly doped with aluminum, of 6H, 4H, and 3C SiC grown on the silicon (0001) face of 6H SiC under special conditions. The lines increase in intensity as more aluminum is added during growth. The multiplicity of observed lines is consistent with symmetry-based models similar to those which have been proposed to describe 4A centers in p-type zincblende semiconductors. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::38ba8061d21fbaee4bed97be8804ce61 https://doi.org/10.1063/1.109627 |
| رقم الأكسشن: | edsair.doi...........38ba8061d21fbaee4bed97be8804ce61 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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