An extension of the rapid wafer-level wijet method and its comparison with conventional electromigration testing
| العنوان: | An extension of the rapid wafer-level wijet method and its comparison with conventional electromigration testing |
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| المؤلفون: | Ph. Normandon, G. Lormand, F. Jeuland, A. Boudou |
| المصدر: | Quality and Reliability Engineering. 8:247-251 |
| بيانات النشر: | Wiley, 1992. |
| سنة النشر: | 1992 |
| مصطلحات موضوعية: | Temperature control, Materials science, Acceleration factor, Acceleration coefficient, Electronic engineering, Wafer, Activation energy, Management Science and Operations Research, Safety, Risk, Reliability and Quality, Electromigration, Current density, Standard deviation, Computational physics |
| الوصف: | With an evaluation of the current density acceleration factor N and an improved temperature control, the rapid wafer-level WIJET electromigration test is extended to the ‘XWIJET’ method. Results for passivated AlSi1% 1·2 mm wide lines are presented and compared with others obtained by conventional electromigration testing. An excellent agreement of the two methods is found for the values of the current density acceleration coefficient N and of the activation energy Q0. A difference between the values of the standard deviation of time-to-failure distributions obtained with both methods is explained by the competition between two failure modes. |
| تدمد: | 1099-1638 0748-8017 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::3def7849e29b629541157d61659a9e5d https://doi.org/10.1002/qre.4680080313 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........3def7849e29b629541157d61659a9e5d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10991638 07488017 |
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