Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction*
| العنوان: | Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction* |
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| المؤلفون: | H. S. Chen, Haiqiang Jia, Chunhua Du, Ran Xu, Wenxin Wang, Ziguang Ma, Zhen Deng, Sen Wang, Gen Yue, Lu Wang, Yang Jiang, Xinxin Li |
| المصدر: | Chinese Physics Letters. 36:057201 |
| بيانات النشر: | IOP Publishing, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Silicon, business.industry, General Physics and Astronomy, chemistry.chemical_element, Photodetector, Photovoltaic effect, Photoelectric effect, Epitaxy, Semimetal, Wavelength, chemistry, Optoelectronics, Absorption (electromagnetic radiation), business |
| الوصف: | Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative (PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory. We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further. |
| تدمد: | 1741-3540 0256-307X |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::3df855443ae36624f000af973c7fd1c4 https://doi.org/10.1088/0256-307x/36/5/057201 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........3df855443ae36624f000af973c7fd1c4 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17413540 0256307X |
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