Visible-Blind Photodetector Based on p-i-n Junction 4H-SiC Vertical Nanocone Array
| العنوان: | Visible-Blind Photodetector Based on p-i-n Junction 4H-SiC Vertical Nanocone Array |
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| المؤلفون: | Yang Mingchao, Xiaolong Zhao, Yahui Cai, Liangliang Zhang, Shuwen Guo, Xianghe Fu, Yongning He, Guo Xiaochuan |
| المصدر: | IEEE Transactions on Electron Devices. 68:6208-6215 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, business.industry, Photodetector, Biasing, medicine.disease_cause, Electronic, Optical and Magnetic Materials, Light intensity, Responsivity, Etching (microfabrication), medicine, Optoelectronics, Electrical and Electronic Engineering, Inductively coupled plasma, business, Ultraviolet, Electron-beam lithography |
| الوصف: | In this article, we report the first experimental results of a novel 4H-silicon carbide (SiC) p-i-n photodetector based on a vertical nanocone array (NCA). It is fabricated by electron beam lithography and inductively coupled plasma (ICP) etching technology. The performance of static and dynamic behavior was studied systematically. It shows the responsivity of ~41.9 mA/W under 360 nm at a bias voltage of -0.5 V and has a linear response to the ultraviolet (UV) light in a wide light intensity range of 0.1-10⁴ mW/cm². The response time decreased as the light intensity rose from 3 mW/cm² to 5 W/cm² and then leveled off at higher light intensity (>100 mW/cm²), which is about 0.25 ms. The photodetector -3-dB cutoff is ~3400 Hz at λ = 360 nm and light intensity = 100 mW/cm². Besides, the detector can respond to the UV light from 260 to 360 nm and the peak responsivity is ~78 mA/W at 320 nm. The analysis results have reference values for the development of an innovative 4H-SiC UV photodetector to some extent. |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::3f44189ff4d6badc1e49257185efd160 https://doi.org/10.1109/ted.2021.3117193 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........3f44189ff4d6badc1e49257185efd160 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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