Characterization of film materials in wafer processing technology development by XPS

التفاصيل البيبلوغرافية
العنوان: Characterization of film materials in wafer processing technology development by XPS
المؤلفون: Wei Liu, Christopher Lazik, C. R. Brundle, Yuri Uritsky, Malcolm J. Bevan, Paul F. Ma, Tang Wei, Bobek Sarah Michelle, Kulshreshtha Prashant Kumar, Venkatasubramanian Eswaranand, Ghazal Saheli
المصدر: Journal of Electron Spectroscopy and Related Phenomena. 231:57-67
بيانات النشر: Elsevier BV, 2019.
سنة النشر: 2019
مصطلحات موضوعية: Radiation, 010304 chemical physics, business.industry, NAND gate, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Characterization (materials science), Amorphous solid, Flash (photography), X-ray photoelectron spectroscopy, 0103 physical sciences, Optoelectronics, Wafer, Physical and Theoretical Chemistry, 0210 nano-technology, business, Spectroscopy, Dram, High-κ dielectric
الوصف: A brief introduction reviews the changes that have occurred in semiconductor wafer processing, which, coupled with developments in X ray Photoelectron Spectroscopy, XPS, instrumentation, have led to XPS becoming a primary materials analysis tool in this industry. Three specific examples illustrating the use of XPS and Angle resolved XPS, ARXPS, are then presented. These are nitridation processing of high k gate material (HfO2 based); the monitoring of Al content and chemistry in a 10A TiAlN film (a metal gate add on process to high k); and deposition of diamond-like amorphous C films (a candidate for hard mask applications in DRAM, NAND flash, and NOR flash memories).
تدمد: 0368-2048
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40c3db3351630b06da5eb3dece902a18
https://doi.org/10.1016/j.elspec.2018.03.007
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........40c3db3351630b06da5eb3dece902a18
قاعدة البيانات: OpenAIRE