New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature

التفاصيل البيبلوغرافية
العنوان: New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature
المؤلفون: Sahn Nahm, Woong-Hee Lee, Sang Hyo Kweon, Mir Im
المصدر: Ceramics International. 45:21773-21780
بيانات النشر: Elsevier BV, 2019.
سنة النشر: 2019
مصطلحات موضوعية: 010302 applied physics, Materials science, Process Chemistry and Technology, Oxide, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Polarization (waves), 01 natural sciences, Ferroelectricity, Piezoelectricity, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Electrophoresis, chemistry, Octahedron, Electric field, 0103 physical sciences, Materials Chemistry, Ceramics and Composites, Composite material, 0210 nano-technology
الوصف: A new lead-free piezoelectric film consisting of Sr2NaNb4O13− (SNNO−) and TiNbO5− (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.
تدمد: 0272-8842
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::40c47b3c6ce41a4f5b57baac46175dbb
https://doi.org/10.1016/j.ceramint.2019.07.180
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........40c47b3c6ce41a4f5b57baac46175dbb
قاعدة البيانات: OpenAIRE