التفاصيل البيبلوغرافية
| العنوان: |
OxRAM integration above FDSOI transistor drain: Integration approach and process impact on electrical characteristics |
| المؤلفون: |
V. Loup, G. Audoit, S. Reboh, R. Coquand, M. Vinet, M. Barlas, N. Rambal, S Barraud, A. Toffoli, E. Vianello, C. Jahan, V. Beugin, Vincent Delaye, O. Pollet, L. Brevard, C. Vizioz, O. Faynot, T. Dewolf, Nicolas Posseme, S. Chevalliez, N. Allouti, L. Perniola, Sébastien Barnola, B. Bouix, S. Bernasconi, C. Comboroure, Philippe Rodriguez, Yves Morand, C. Tallaron, L. Grenouillet |
| المصدر: |
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials. |
| بيانات النشر: |
The Japan Society of Applied Physics, 2017. |
| سنة النشر: |
2017 |
| مصطلحات موضوعية: |
Materials science, law, Process (engineering), Transistor, Engineering physics, law.invention |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::40e32b0961ff0b1c447494a433e2c935
https://doi.org/10.7567/ssdm.2017.d-1-04 |
| رقم الأكسشن: |
edsair.doi...........40e32b0961ff0b1c447494a433e2c935 |
| قاعدة البيانات: |
OpenAIRE |
