Effects of crystal orientation on the optical gain characteristics of blue AlInGaN/InGaN quantum-well structures
العنوان: | Effects of crystal orientation on the optical gain characteristics of blue AlInGaN/InGaN quantum-well structures |
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المؤلفون: | Yong Hee Cho, Sung-Jin Kim, Keonwook Kang, Mun Bo Shim, Chang Young Park, Seoung Hwan Park, Y. Eugene Pak, Seung-Hyun Yoo, Dhaneshwar Mishra |
المصدر: | Journal of the Korean Physical Society. 65:457-461 |
بيانات النشر: | Korean Physical Society, 2014. |
سنة النشر: | 2014 |
مصطلحات موضوعية: | Crystal, Materials science, Field (physics), business.industry, law, Crystal orientation, General Physics and Astronomy, Optoelectronics, Matrix element, business, Laser, Quantum well, law.invention |
الوصف: | The effects of crystal orientation on the optical gain characteristics of blue AlInGaN/InGaN quantum-well (QW) structures with a reduced internal field were investigated by using the non-Markovian model with many-body effects. The AlInGaN/InGaN system has a larger matrix element than the conventional InGaN/GaN system because the former has a smaller internal field than the latter for relatively small crystal angles. As a result, for QW structures with a relatively small crystal angle (θ = 30°), the AlInGaN/InGaN system is shown to have a much larger optical gain than the conventional InGaN/GaN system. On the other hand, in the case of QW structures with a large crystal angle (θ = 90°), the AlInGaN/InGaN system is shown to have a smaller optical gain than the conventional InGaN/GaN system. Hence, we expect that we can obtain high-efficiency optoelectronic devices by using quaternary AlInGaN QW for relatively small crystal angles. |
تدمد: | 1976-8524 0374-4884 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::42f8f4567070177c55c1f530ad232cab https://doi.org/10.3938/jkps.65.457 |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi...........42f8f4567070177c55c1f530ad232cab |
قاعدة البيانات: | OpenAIRE |
تدمد: | 19768524 03744884 |
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