أعرض في EDS

Effects of crystal orientation on the optical gain characteristics of blue AlInGaN/InGaN quantum-well structures

التفاصيل البيبلوغرافية
العنوان: Effects of crystal orientation on the optical gain characteristics of blue AlInGaN/InGaN quantum-well structures
المؤلفون: Yong Hee Cho, Sung-Jin Kim, Keonwook Kang, Mun Bo Shim, Chang Young Park, Seoung Hwan Park, Y. Eugene Pak, Seung-Hyun Yoo, Dhaneshwar Mishra
المصدر: Journal of the Korean Physical Society. 65:457-461
بيانات النشر: Korean Physical Society, 2014.
سنة النشر: 2014
مصطلحات موضوعية: Crystal, Materials science, Field (physics), business.industry, law, Crystal orientation, General Physics and Astronomy, Optoelectronics, Matrix element, business, Laser, Quantum well, law.invention
الوصف: The effects of crystal orientation on the optical gain characteristics of blue AlInGaN/InGaN quantum-well (QW) structures with a reduced internal field were investigated by using the non-Markovian model with many-body effects. The AlInGaN/InGaN system has a larger matrix element than the conventional InGaN/GaN system because the former has a smaller internal field than the latter for relatively small crystal angles. As a result, for QW structures with a relatively small crystal angle (θ = 30°), the AlInGaN/InGaN system is shown to have a much larger optical gain than the conventional InGaN/GaN system. On the other hand, in the case of QW structures with a large crystal angle (θ = 90°), the AlInGaN/InGaN system is shown to have a smaller optical gain than the conventional InGaN/GaN system. Hence, we expect that we can obtain high-efficiency optoelectronic devices by using quaternary AlInGaN QW for relatively small crystal angles.
تدمد: 1976-8524
0374-4884
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::42f8f4567070177c55c1f530ad232cab
https://doi.org/10.3938/jkps.65.457
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........42f8f4567070177c55c1f530ad232cab
قاعدة البيانات: OpenAIRE
الوصف
تدمد:19768524
03744884