An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme

التفاصيل البيبلوغرافية
العنوان: An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme
المؤلفون: Jung Sunwoo, Hoon Lee, Woo-Seop Kim, Moon-Sook Park, Kyu-hyoun Kim, Young-Chan Jang, Hoe-ju Chung, Chang-Hyun Kim, Su-Jin Chung, Duk-ha Park, Jae-Kwan Kim, Jin-Young Kim, Hyun-Kyung Kim, Hwan-Wook Park, Uk-Song Kang, Young-Taek Lee, Joo Sun Choi, Kee-Won Kwon, Hyung-seuk Kim
المصدر: ISSCC
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2007.
سنة النشر: 2007
مصطلحات موضوعية: Input/output, Dynamic random-access memory, business.industry, Cycles per instruction, Computer science, Bubble, Parallel computing, Integrated circuit, Chip, law.invention, law, Transfer (computing), Code (cryptography), Bandwidth (computing), Electrical and Electronic Engineering, business, Error detection and correction, Computer hardware
الوصف: This paper proposes a deca-data rate clocking scheme and relevant I/O circuit techniques for a multi-Gb/s/pin memory interface. A deca-data rate scheme transmits 10 bits in one external clock cycle to transfer an error control code along with original data seamlessly without a timing bubble. A 288 Mb SDRAM has been designed using the proposed scheme combined with fast cycling core techniques to have both high I/O bandwidth and fast random cycling. Measured results show that the chip exhibits per-pin data rate of 8 Gb/s and row cycle time of 9.6 ns
تدمد: 0018-9200
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::459383a88b892d96879ad94fa0d7818a
https://doi.org/10.1109/jssc.2006.888297
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........459383a88b892d96879ad94fa0d7818a
قاعدة البيانات: OpenAIRE