Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology

التفاصيل البيبلوغرافية
العنوان: Reliability Characterization for 12 V Application Using the 22FFL FinFET Technology
المؤلفون: C.-Y. Su, M. Maksud, James Waldemer, David Young, J. Palmer, S. Ramey, Mark Armstrong, H. Li, C. Perini, L. Paulson, M. El-tanani, H. Greve, Benjamin J. Orr, Sunny Chugh, Y. Yang
المصدر: IRPS
بيانات النشر: IEEE, 2020.
سنة النشر: 2020
مصطلحات موضوعية: 010302 applied physics, Computer science, Transistor, Process (computing), High voltage, 02 engineering and technology, 021001 nanoscience & nanotechnology, Chip, 01 natural sciences, law.invention, Reliability engineering, Characterization (materials science), Reliability (semiconductor), law, 0103 physical sciences, 0210 nano-technology, Voltage
الوصف: The 22FFL technology developed for operation to 3.3V is used to investigate process and design considerations required to extend technology capability to 12 V applications. A prototype chip was carefully designed in close consideration with the technology reliability requirements of the lower voltage components to demonstrate product-level reliability capabilities. The reliability of components such as transistors, well junctions, back-end dielectrics and MIMCAPs is thoroughly characterized and proven robust throughout a 10-year lifetime. The results demonstrate a reliable technology capability that is compliant with industrial standards to enable high-voltage design requirements.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::45dc665dc065eb2ae6d5561d5bd1891d
https://doi.org/10.1109/irps45951.2020.9128314
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........45dc665dc065eb2ae6d5561d5bd1891d
قاعدة البيانات: OpenAIRE