Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon
العنوان: | Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon |
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المؤلفون: | G. S. Oehrlein |
المصدر: | Journal of Applied Physics. 54:5453-5455 |
بيانات النشر: | AIP Publishing, 1983. |
سنة النشر: | 1983 |
مصطلحات موضوعية: | Materials science, Oxygen atom, Silicon, chemistry, Annealing (metallurgy), Kinetics, Inorganic chemistry, Thermal, General Physics and Astronomy, chemistry.chemical_element, Kinetic energy, Chemical composition, Oxygen |
الوصف: | A kinetic study of thermal donor formation in 450 °C heat‐treated modern silicon crystals has been performed and it is concluded that SiO3 complexes are the dominant thermal donor species (for heat‐treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active. |
تدمد: | 1089-7550 0021-8979 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::4688bc2191ca4eef244a3b35bfb28af0 https://doi.org/10.1063/1.332728 |
رقم الأكسشن: | edsair.doi...........4688bc2191ca4eef244a3b35bfb28af0 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 10897550 00218979 |
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