Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon

التفاصيل البيبلوغرافية
العنوان: Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon
المؤلفون: G. S. Oehrlein
المصدر: Journal of Applied Physics. 54:5453-5455
بيانات النشر: AIP Publishing, 1983.
سنة النشر: 1983
مصطلحات موضوعية: Materials science, Oxygen atom, Silicon, chemistry, Annealing (metallurgy), Kinetics, Inorganic chemistry, Thermal, General Physics and Astronomy, chemistry.chemical_element, Kinetic energy, Chemical composition, Oxygen
الوصف: A kinetic study of thermal donor formation in 450 °C heat‐treated modern silicon crystals has been performed and it is concluded that SiO3 complexes are the dominant thermal donor species (for heat‐treatment times of up to about 100 h), rather than SiO4 complexes. Clusters containing a number of oxygen atoms other than three or four seem to be also electrically active.
تدمد: 1089-7550
0021-8979
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4688bc2191ca4eef244a3b35bfb28af0
https://doi.org/10.1063/1.332728
رقم الأكسشن: edsair.doi...........4688bc2191ca4eef244a3b35bfb28af0
قاعدة البيانات: OpenAIRE