Simulation of the GaAsN-based Schottky solar cell prototype
| العنوان: | Simulation of the GaAsN-based Schottky solar cell prototype |
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| المؤلفون: | A. Boumesjed, Zineb Benamara, N. Benseddik, S. Kadid, N. Benyahya, K. Ameur, H. Mazari |
| المصدر: | International Journal of Ambient Energy. 43:726-731 |
| بيانات النشر: | Informa UK Limited, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Range (particle radiation), Materials science, Renewable Energy, Sustainability and the Environment, business.industry, 020209 energy, Schottky diode, 02 engineering and technology, Building and Construction, law.invention, 020401 chemical engineering, law, Solar cell, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, 0204 chemical engineering, business, Nitride semiconductors |
| الوصف: | Dilute nitride semiconductors, such as GaAs1–xNx alloys, have attracted considerable attention due to their unique physical properties and wide range of their possible application in optoelectronic... |
| تدمد: | 2162-8246 0143-0750 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::46b410381c15588ddb523d63b2b723ff https://doi.org/10.1080/01430750.2019.1670255 |
| رقم الأكسشن: | edsair.doi...........46b410381c15588ddb523d63b2b723ff |
| قاعدة البيانات: | OpenAIRE |
PDF full text from Publisher | تدمد: | 21628246 01430750 |
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