Synthesis and Characterization of Plasma-Polymer Gate Dielectric Films for Graphene Field Effect Transistor Devices
| العنوان: | Synthesis and Characterization of Plasma-Polymer Gate Dielectric Films for Graphene Field Effect Transistor Devices |
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| المؤلفون: | Hyeon Jin Seo, Yeong Eun Gil, Ki-Hwan Hwang, Antony Ananth, Jin-Hyo Boo |
| المصدر: | Electronic Materials Letters. 15:396-401 |
| بيانات النشر: | Springer Science and Business Media LLC, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | inorganic chemicals, Materials science, Graphene, business.industry, Gate dielectric, technology, industry, and agriculture, 02 engineering and technology, Dielectric, Chemical vapor deposition, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, symbols.namesake, Plasma-enhanced chemical vapor deposition, law, symbols, Optoelectronics, Field-effect transistor, Thin film, 0210 nano-technology, business, Raman spectroscopy |
| الوصف: | In this study, a gate dielectric suitable for application in field effect transistors (FETs) was synthesized. Gate dielectrics were deposited using cyclohexane via plasma-enhanced chemical vapor deposition. These films were synthesized on silicon wafers substrates with plasma powers adjusted from 10 to 60 W. Graphene was synthesized on a nickel substrate by a thermal chemical vapor deposition process and coupled to the plasma-polymer via water transfer. Alpha step, Fourier-transform infrared spectroscopy, Raman spectroscopy, and atomic force microscopy findings in addition to water contact angle measurements were analyzed to characterize the physical and chemical properties of the plasma-polymer thin film. Furthermore, a probe station was used to characterize the FET devices fabricated using such films. |
| تدمد: | 2093-6788 1738-8090 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::47b6ac20325be976247ae5f3e0de2bc4 https://doi.org/10.1007/s13391-019-00139-6 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........47b6ac20325be976247ae5f3e0de2bc4 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 20936788 17388090 |
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