Bi-enhanced N incorporation in GaAsNBi alloys
| العنوان: | Bi-enhanced N incorporation in GaAsNBi alloys |
|---|---|
| المؤلفون: | J. Occena, T. M. Johnson, E. Rizzi, J. Horwath, Yongqiang Wang, Rachel Goldman, T. Jen |
| المصدر: | Applied Physics Letters. 110:242102 |
| بيانات النشر: | AIP Publishing, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Nitrogen, Bismuth, Crystallography, N incorporation, Flux (metallurgy), chemistry, Nuclear reaction analysis, Lattice (order), 0103 physical sciences, 0210 nano-technology |
| الوصف: | We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs1-x-yNxBiy alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying non-substitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As)As interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenic-terminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As)As. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::48c6ad6149a01cc52fdc0282f2428bec https://doi.org/10.1063/1.4984227 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........48c6ad6149a01cc52fdc0282f2428bec |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
|---|