The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions
| العنوان: | The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions |
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| المؤلفون: | Jinshun Bi, Xueqin Yang, Yannan Xu, Kai Xi, Lanlong Ji |
| المصدر: | Applied Physics Express. 14:061001 |
| بيانات النشر: | IOP Publishing, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Zirconium, Materials science, Proton radiation, chemistry, Doping, Inorganic chemistry, General Engineering, General Physics and Astronomy, chemistry.chemical_element, Ferroelectricity, Aluminum oxide, Quantum tunnelling, Hafnium oxide |
| الوصف: | The effects of proton radiation on TiN/Zr-doped-HfO2(HZO)/Al2O3/P+-Ge ferroelectric tunneling junctions are investigated in the present work. The electrical characteristics are measured before and after different proton fluences. The remanent polarization exhibits negligible change, which demonstrates the proton radiation immunity of the ferroelectric material HZO. However, the capacitance, leakage current, endurance, and read current characteristics show obviously changed with the increase of proton fluence. The main reason for this is that proton radiation causes positive fixed charges to form in the Al2O3 layer, interface charges to form in Al2O3/Ge and the effective carrier concentration to reduce in the Ge substrate. |
| تدمد: | 1882-0786 1882-0778 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::49c26291a90c6fb217b59ae1630ec52e https://doi.org/10.35848/1882-0786/abfa77 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........49c26291a90c6fb217b59ae1630ec52e |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 18820786 18820778 |
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